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M—IDG结构小型超宽带衰减器的FDTD仿真和实现

[摘要]
本文在分析新型传输线-微带加载插入介质波导(M-IDG)基本特性的基础上,用FDTD法仿真设计了小型、超宽带衰减器。电路尺寸分5.1×25mm2和5.1×40mm2两种。对于10dB衰减器,工作频带0.5~18GHz内衰减起伏小于1.0dB;30dB衰减器,在2.0~18GHz带宽内,衰减起伏小于2.5dB。实测结果与FDTD仿真结果基本吻合。
[英文摘要]
The basic properties of the microstrip-loaded inset dielectric guide (M-IDG) are analyzed by FDTD method, then this kind of ultra wide band attenuators are implemented by FDTD simulation. There are two kinds of the circuit sizes--5. 1×25mm2 and 5. 1×40mm2. For 10dB attenuator,the fluctuation of attenuation is less than 1.0dB within 0. 5~18GHz bandwidth. For 30dB attenuator,the fluctuation is less than 2. 5dB within 2.0~18GHz bandwidth. The measurement data are in agreements with the results of FDTD simulation.
[关键词]
微带加载插入介质波导(M-IDG),超宽带衰减器,FDTD仿真
[作者]
张琰 高本庆 李镇 杨春涛
[作者单位]
北京理工大学电子工程系,北京 100081;北京理工大学电子工程系,北京 100081;北京理工大学电子工程系,北京 100081;中国航天总公司二院203研究所,北京 100854;Department of Electrical Engineering, Bei jing Institute of Technology ,Bei jing 100081;Department of Electrical Engineering, Bei jing Institute of Technology ,Bei jing 100081;Department of Electrical Engineering, Bei jing Institute of Technology ,Bei jing 100081;Beijing Institute of Radio Metrology and measurement, Beijing 100854;
[刊名]
微波学报
[英文刊名]
JOURNAL OF MICROWAVES
[期刊类别]
无线电电子学与电信技术
[年 卷 期]
2000   16   03

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