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(Sr,Pb)TiO3 系V形PTCR陶瓷材料的研制

[摘要]
研究了原材料、液相添加剂BN对Y3+掺杂的(Sr0.4Pb0.6)TiO3 V形PTCR陶瓷半导化和显微结构的影响。结果表明,添加剂BN能促进晶粒生长、改善显微结构、显著降低室温电阻率ρ25和烧结温度。用常规的制备方法制得居里温度TC≈210℃、ρ25≤5.0×103Ω。cm、电阻温度系数α40≈13%℃-1、电阻率ρ突变比ρmax/ρmin>5.0×103的V形PTCR陶瓷材料。
[英文摘要]
The effect of raw materials and liquid-phase additives BN on the semiconducting state and the microstructure of V-type PTCR (Sr0.4Pb0.6)TiO3 ceramics doped with Y3+ is studied. The results show that additives BN can promote the growth of grain, improve the microstructure, obviously reduce the room-temperature resistivity and the sintering temperature of ceramics. by conventional preparation processes, the V-type PTCR ceramics is made with Curie temperature TC≈210℃, room temperature resistivity ρ25≤5.0×103Ω*cm, temperature coefficient of resistivity α40≈13%/℃, resistivity jump ρmax/ρmin>5.0×103. (8 refs.)
[关键词]
钛酸锶铅 V形PTCR陶瓷 添加剂 氮化硼
[作者]
詹益增
[作者单位]
华南理工大学材料科学与工程学院
[刊名]
电子元件与材料
[英文刊名]
ELECTRONIC COMPONENTS&MATERIALS
[期刊类别]
无线电电子学与电信技术
[年 卷 期]
1999   18   2

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